제조사부품번호

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

RS 제품 번호:: 146-4249
제조사 부품 번호:: IXFN110N85X
제조업체:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

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대량 구매 할인 기용 가능

Subtotal (1 tube of 10 units)*

₩956,920.00

일시적 품절

2027년 1월 04일 부터 배송

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수량	한팩당	Per Tube*
10 - 10	₩95,692.00	₩956,920.00
20 - 90	₩93,778.16	₩937,781.60
100 +	₩91,903.80	₩919,038.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 146-4249
제조사 부품 번호:: IXFN110N85X
제조업체:: IXYS

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	IXYS
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	110A
	Maximum Drain Source Voltage Vds	850V
	Package Type	SOT-227
	Series	HiperFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	425nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	1.17kW
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Length	38.23mm
	Standards/Approvals	No
	Width	25.07 mm
	Height	9.6mm
	Automotive Standard	No

	모두 선택
	브랜드 IXYS
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 110A
	Maximum Drain Source Voltage Vds 850V
	Package Type SOT-227
	Series HiperFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 425nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 1.17kW
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Length 38.23mm
	Standards/Approvals No
	Width 25.07 mm
	Height 9.6mm
	Automotive Standard No

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

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