Infineon Isolated OptiMOS 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1

RS 제품 번호:: 145-9487
제조사 부품 번호:: 2N7002DWH6327XTSA1
제조업체:: Infineon

Infineon Isolated OptiMOS 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1

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Subtotal (1 reel of 3000 units)*

₩372,000.00

추가로 2026년 8월 24일 부터 15,000 개 단위 배송

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수량	한팩당	릴당*
3000 - 12000	₩124.00	₩373,200.00
15000 +	₩112.00	₩336,000.00

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RS 제품 번호:: 145-9487
제조사 부품 번호:: 2N7002DWH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-88
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	4Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.4nC
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.96V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.8mm
	Length	2mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-88
	Series OptiMOS
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 4Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.4nC
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.96V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.8mm
	Length 2mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon OptiMOS Series MOSFET, 60V Drain Source Voltage, 4Ω Drain Source Resistance - 2N7002DWH6327XTSA1

This MOSFET is a surface-mount N-channel transistor designed for low-power switching in constrained assemblies. It operates in enhancement mode and combines two elements on a single chip to deliver compact dual-die switching suitable for automotive-rated and industrial environments. The device is intended for board-level applications requiring modest current handling and controlled on-resistance.

Features and Benefits:

• 60V drain rating enables higher-voltage switching applications
• 4Ω maximum Rds reduces conduction losses during on-state
• 300mA continuous drain current supports low-current loads
• 0.4nC typical gate charge allows fast, efficient switching
• 500mW power dissipation suits low-power, thermally limited designs
• -55°C to 150°C operating range ensures thermal endurance

Applications

• Suitable for microcontroller-driven load switching
• Ideal for interfacing sensors in automotive systems
• Used with battery-management balancing circuits
• Can be used for small relay replacement duties
• Appropriate for compact SMD power-path control

What package and pin count should I prepare for PCB layout?

The device is supplied in a small SC-88 surface-mount package with six pins, so pads and thermal relief should match the SC-88 footprint.

How does the dual-element chip affect parallel operation?

Two elements on the same die permit compact dual-channel arrangements without external matching, but total thermal limits remain per package.

What gate and drain voltage limits must be observed?

The gate-source voltage must not exceed ±20V while the drain-source voltage limit is 60V to avoid device stress.

What forward voltage can be expected when conducting?

A forward voltage measurement of approximately 0.96V applies under specified test conditions for relevant conduction paths.