Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 145-9198
제조사 부품 번호:: IRFB4410ZPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩154,500.00

350 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 200	₩3,090.00	₩154,500.00
250 +	₩2,782.00	₩139,080.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-9198
제조사 부품 번호:: IRFB4410ZPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	230W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Standards/Approvals	No
	Height	9.02mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 230W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Standards/Approvals No
	Height 9.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 97A Maximum Continuous Drain Current - IRFB4410ZPBF

This MOSFET is a high-power switching transistor designed for through-hole mounting in power electronics assemblies. It operates as an N-channel enhancement device capable of handling substantial continuous drain current and high drain-source voltage across a wide ambient range, making it suitable for demanding thermal environments and conventional heatsinking arrangements.

Features and Benefits:

• 100V drain-source voltage enables high-voltage switching
• 97A continuous current supports heavy-load applications
• 9 mΩ Rds(on) minimises conduction losses during operation
• 230W power dissipation allows sustained high-power use
• 83 nC typical gate charge gives predictable switching energy
• 20V gate tolerance permits robust gate-drive margins

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for high-current DC-DC converters and supplies
• Used for power switching in telecoms and server supplies
• Can be used for battery management and charging systems
• Suitable for laboratory power electronics prototyping

What package type is provided for mounting and cooling?

It is supplied in a TO-220 through-hole package that facilitates secure PCB mounting and straightforward attachment to a heatsink for thermal management.

What gate-drive considerations should I make for switching performance?

Expect a typical total gate charge of 83 nC at standard gate voltage

design gate drivers to source and sink sufficient current to meet target switching speeds while managing switching losses.

How does junction temperature range affect deployment?

The device is rated to operate from -55 °C up to 175 °C, enabling use in applications with broad ambient and junction temperature excursions provided adequate thermal design is applied.

What is the forward voltage in conduction and its implication?

The forward conduction voltage is 1.3V under specified conditions, which contributes to overall conduction loss calculations when sizing thermal and power budgets.