onsemi UltraFET Type N-Channel MOSFET, 33 A, 60 V Enhancement, 3-Pin TO-220 HUF76423P3
- RS 제품 번호:
- 145-5464
- 제조사 부품 번호:
- HUF76423P3
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩79,600.00
마지막 RS 재고
- 최종적인 350 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩1,592.00 | ₩79,620.00 |
| 100 - 150 | ₩1,544.00 | ₩77,220.00 |
| 200 + | ₩1,498.00 | ₩74,920.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 145-5464
- 제조사 부품 번호:
- HUF76423P3
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | UltraFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 85W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.25V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series UltraFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 85W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.25V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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