Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF

RS 제품 번호:: 130-0999
제조사 부품 번호:: IRFS4010TRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩10,772.40

재고있음

추가로 2025년 12월 29일 부터 16 개 단위 배송
추가로 2026년 1월 05일 부터 818 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 198	₩5,386.20	₩10,772.40
200 - 398	₩5,245.20	₩10,490.40
400 +	₩5,170.00	₩10,340.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 130-0999
제조사 부품 번호:: IRFS4010TRLPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.7mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	143nC
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	4.83mm
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.7mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 143nC
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 4.83mm
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFS4010TRLPBF

This high-power MOSFET delivers strong performance across various applications, essential for contemporary electronic systems. Its enhancement mode operation and Advanced HEXFET technology provide efficient power management, making it suitable for applications that require dependable power control.

Features & Benefits

• Supports continuous drain current up to 180A for substantial loads

• Maximum drain-source voltage rated at 100V for flexibility

• Low Rds(on) of 4.7mΩ minimises power loss during operation

• Designed in a single configuration for easier integration

• Handles temperatures up to +175°C effectively

• Capable of high-speed power switching for efficient operations

Applications

• Used in synchronous rectification for switched-mode power supplies

• Suitable for uninterruptible power supply systems

• Applied in hard-switched and high-frequency circuits

• Utilised in automation equipment that needs efficient power management

• Integrates well into diverse electrical and mechanical projects

How does the resistance affect performance in high-frequency applications?

A low Rds(on) notably reduces heat generation and power loss, enhancing the efficiency of high-frequency power converters.

What gate voltage is required to ensure optimal operation?

The device operates effectively with a gate-source voltage between 2V and 4V, with 10V recommended for maximum efficiency.

Is installation straightforward for this component?

Yes, this surface mount MOSFET is designed for easy placement on PCBs, allowing for quick and reliable setups in various devices.

Can it handle thermal management effectively?

With a maximum operating junction temperature of +175°C, it is suitable for use in environments that require solid thermal performance.

What types of circuits can benefit from incorporating this component?

It is Ideal for high-speed switching applications, load driver circuits, and power management systems in automation and electrical fields.