Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

RS 제품 번호:: 130-0923
제조사 부품 번호:: IPP055N03LGXKSA1
제조업체:: Infineon

Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩16,450.00

마지막 RS 재고

최종적인 100 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 10	₩1,645.00	₩16,450.00
20 - 20	₩1,603.64	₩16,036.40
30 +	₩1,579.20	₩15,792.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 130-0923
제조사 부품 번호:: IPP055N03LGXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-220
	Series	OptiMOS 3
	Mount Type	Surface, Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Standards/Approvals	IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS
	Height	15.95mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-220
	Series OptiMOS 3
	Mount Type Surface, Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Standards/Approvals IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS
	Height 15.95mm
	Automotive Standard No

Infineon OptiMOS™ 3 Series MOSFET, 50A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IPP055N03LGXKSA1

This high-performance MOSFET is designed for various electronic applications, including power management systems. It features a through-hole TO-220 package, measuring 10.36mm x 4.57mm x 15.95mm. Specifically suited for automation and electrical industries, this device ensures optimal performance under rigorous conditions.

Features & Benefits

• Fast switching capability enhances efficiency in power applications

• Low drain-source on-resistance minimises power loss during operation

• Avalanche rated for improved durability under stress

• Logic-level N-channel design enables compatibility with low-voltage drives

• Maximum continuous drain current of 50A supports demanding tasks

Applications

• Used for DC/DC conversion in power supplies

• Ideal for synchronous rectification in high-efficiency converters

• Facilitates motor control in industrial automation systems

• Used in battery management systems for electric vehicles

• Suitable for both consumer electronics and renewable energy

What is the significance of its low RDS(on) in power applications?

A low RDS(on) reduces the on-state voltage drop, which directly lowers heat generation and improves efficiency. This is Crucial for maintaining performance in high-current applications, ensuring that less energy is wasted as heat.

How does this MOSFET handle high temperatures during operation?

With a maximum operating temperature of +175 °C, it has robust thermal characteristics, allowing it to function reliably in challenging environments without compromising performance.

What type of applications can benefit from the enhancement mode transistor design?

Enhancement mode transistors are widely used in switching applications as they provide excellent control over the current flow, making them Ideal for efficient power management solutions. This includes their use in power supplies and DC motors.