onsemi QFET Type P-Channel MOSFET, 19 A, 60 V Enhancement, 3-Pin TO-220
- RS 제품 번호:
- 124-1401
- 제조사 부품 번호:
- FQPF27P06
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩96,914.00
일시적 품절
- 2026년 2월 04일 부터 950 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩1,938.28 | ₩96,895.20 |
| 100 - 150 | ₩1,880.00 | ₩93,981.20 |
| 200 + | ₩1,823.60 | ₩91,161.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 124-1401
- 제조사 부품 번호:
- FQPF27P06
- 제조업체:
- onsemi
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -4V | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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