STMicroelectronics N channel-Channel MOSFET, 220 A, 80 V Enhancement Mode, 8-Pin PowerFLAT STL190N8F8
- RS 제품 번호:
- 834-676
- 제조사 부품 번호:
- STL190N8F8
- 제조업체:
- STMicroelectronics
N
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Subtotal (1 reel of 3000 units)*
₩8,010,000.00
일시적 품절
- 2026년 12월 15일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩2,670.00 | ₩8,008,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 834-676
- 제조사 부품 번호:
- STL190N8F8
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 220A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Height | 1mm | |
| Width | 5mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 220A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Height 1mm | ||
Width 5mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- SG
The STMicroelectronics N channel power MOSFET designed to deliver efficient performance in various power applications. It features robust specifications suitable for High current demands in Compact packaging.
Max drain-source voltage of 80 V ensures operational reliability
Low on-resistance of 4.5 mΩ promotes energy efficiency
High continuous drain current rating up to 126 A supports demanding designs
Optimised for a maximum junction temperature of 175 °C for enhanced durability
Avalanche tested design guarantees robustness under fault conditions
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