STMicroelectronics N channel-Channel MOSFET, 125 A, 100 V Enhancement Mode, 8-Pin PowerLeaded STL125N10LF8AG
- RS 제품 번호:
- 834-675
- 제조사 부품 번호:
- STL125N10LF8AG
- 제조업체:
- STMicroelectronics
N
Subtotal (1 reel of 3000 units)*
₩6,576,000.00
일시적 품절
- 2026년 12월 04일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩2,192.00 | ₩6,578,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 834-675
- 제조사 부품 번호:
- STL125N10LF8AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerLeaded | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 6mm | |
| Standards/Approvals | ROHS | |
| Width | 5mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerLeaded | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 6mm | ||
Standards/Approvals ROHS | ||
Width 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET utilizes Advanced trench gate technology to optimize power density and efficiency across automotive and industrial power conversion systems.
Automotive grade qualification ensures reliable operation under extreme conditions
State of the ART figure of merit significantly reduces overall switching losses
Very low on state resistance minimizes thermal dissipation during high current conduction
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