Vishay SQM P-Channel Single MOSFETs, -93 A, -100 V Enhancement Mode, 3-Pin TO-263 SQM100P10-19L_NE3
- RS 제품 번호:
- 829-357
- 제조사 부품 번호:
- SQM100P10-19L_NE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩7,996.00
일시적 품절
- 2027년 3월 22일 부터 배송
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- RS 제품 번호:
- 829-357
- 제조사 부품 번호:
- SQM100P10-19L_NE3
- 제조업체:
- Vishay
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -93A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | TO-263 | |
| Series | SQM | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0190Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 10.28mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -93A | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type TO-263 | ||
Series SQM | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0190Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Standards/Approvals RoHS Compliant | ||
Width 10.28mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET designed for automotive applications, offering efficient performance and high reliability. Its Advanced TrenchFET technology ensures optimal thermal management and effective switching capabilities.
TrenchFET technology enhances efficiency and thermal performance
Rated for a Drain-Source Voltage of -100 V, ensuring robust operation
Package designed for low thermal resistance for better heat dissipation
Tests show 100% R and UIS validation for high reliability
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