Infineon CoolSiC N channel-Channel Power MOSFET, 65 A, 400 V Enhancement, 3-Pin TO-247 IMW40R025M2HXKSA1
- RS 제품 번호:
- 762-903
- 제조사 부품 번호:
- IMW40R025M2HXKSA1
- 제조업체:
- Infineon
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩15,635.10
재고있음
- 240 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩15,635.10 |
| 10 - 49 | ₩12,673.05 |
| 50 - 99 | ₩9,689.55 |
| 100 + | ₩7,751.25 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-903
- 제조사 부품 번호:
- IMW40R025M2HXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 195W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Length | 20.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 195W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Length 20.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
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