Vishay SiS N channel-Channel MOSFET, 91 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SiSD4604LDN
- RS 제품 번호:
- 735-141
- 제조사 부품 번호:
- SiSD4604LDN
- 제조업체:
- Vishay
N
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩2,930.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩2,930.00 |
| 10 - 24 | ₩1,900.00 |
| 25 - 99 | ₩1,006.00 |
| 100 - 499 | ₩984.00 |
| 500 + | ₩962.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-141
- 제조사 부품 번호:
- SiSD4604LDN
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | SiS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0034Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 60V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4mm | |
| Height | 1mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series SiS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0034Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 60V | ||
Maximum Operating Temperature 150°C | ||
Length 4mm | ||
Height 1mm | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
57W power dissipation
28A continuous drain current
Low 15nC maximum total gate charge
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