STMicroelectronics STP25 N channel-Channel Power MOSFET, 56 A, 250 V Enhancement, 3-Pin TO-220 STP25N018M9

N

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10 - 24₩4,478.16
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100 - 499₩3,258.04
500 +₩3,173.44

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RS 제품 번호:
711-524
제조사 부품 번호:
STP25N018M9
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220

Series

STP25

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

320W

Maximum Operating Temperature

150°C

Height

4.6mm

Width

10.4 mm

Length

15.75mm

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Very low FOM (RDS(on)·Qg)

Higher dv/dt capability

Excellent switching performance

Easy to drive

100% avalanche tested

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