제조사부품번호

ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB

RS 제품 번호:: 687-450
제조사 부품 번호:: RH7G04CBKFRATCB
제조업체:: ROHM

ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB

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대량 구매 할인 기용 가능

Subtotal (1 tape of 2 units)*

₩3,083.20

재고있음

96 개 단위 배송 준비 완료

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수량	한팩당	Per Tape*
2 - 18	₩1,541.60	₩3,083.20
20 - 48	₩1,363.00	₩2,726.00
50 - 198	₩1,212.60	₩2,425.20
200 - 998	₩1,175.00	₩2,350.00
1000 +	₩1,137.40	₩2,274.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 687-450
제조사 부품 번호:: RH7G04CBKFRATCB
제조업체:: ROHM

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	40V
	Package Type	DFN3333T8LSAB
	Series	RH7G04CBKFRA
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.0mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	62W
	Typical Gate Charge Qg @ Vgs	19.1nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Length	3.4mm
	Width	3.4 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 40V
	Package Type DFN3333T8LSAB
	Series RH7G04CBKFRA
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.0mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 62W
	Typical Gate Charge Qg @ Vgs 19.1nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals RoHS
	Length 3.4mm
	Width 3.4 mm
	Automotive Standard AEC-Q101

Datasheet - RH7G04CBKFRATCB

COO (Country of Origin):: JP

The ROHM N channel Power MOSFET designed to operate efficiently in demanding applications. With a maximum drain-source voltage of 40V and a continuous drain current capability of up to 40A, this component excels in power switching and amplification tasks. Its low on-state resistance of 5.0 mΩ ensures minimal power loss during operation, making it ideal for both automotive and industrial applications. AEC-Q101 qualified, this device provides reliable performance with 100% avalanche testing, ensuring safety and durability in various operating conditions.

Designed for high efficiency with low on-state resistance, reducing heat generation

AEC Q101 qualified, ensuring reliability for automotive standards

100% avalanche tested for enhanced safety under transient conditions

Continuous drain current capability of up to 40A for demanding applications

Operating junction temperature range from -55 to +175°C for versatile usage

Suitable for applications in ADAS, lighting, and body electronics

Complies with strict quality control measures for dependable performance

ROHM RH7G04CBKFRA Type N-Channel Single MOSFETs, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB

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