ROHM RS6G122CH Type N-Channel Single MOSFETs, -40 V Enhancement, 8-Pin HSOP-8 RS6G122CHTB1

N

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Subtotal (1 tape of 2 units)*

₩4,354.08

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  • 2026년 1월 21일 부터 배송
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2 - 18₩2,177.04₩4,352.20
20 - 48₩1,913.84₩3,825.80
50 - 198₩1,723.96₩3,447.92
200 - 998₩1,387.44₩2,774.88
1000 +₩1,355.48₩2,710.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
687-439
제조사 부품 번호:
RS6G122CHTB1
제조업체:
ROHM
제품 정보를 선택해 유사 제품을 찾기
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브랜드

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Drain Source Voltage Vds

-40V

Series

RS6G122CH

Package Type

HSOP-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.20mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Width

3 mm

Height

1mm

Standards/Approvals

RoHS

Length

3mm

Automotive Standard

No

COO (Country of Origin):
JP
The ROHM Power MOSFET is designed to deliver high efficiency in demanding applications. Featuring a maximum operating voltage of 40V and capable of handling a continuous drain current of up to 225A, it is ideal for use in motor drives and DC/DC converters. The robust HSOP8 package ensures effective thermal management with a low thermal resistance, promoting reliable performance even under high load conditions. With stringent RoHS compliance, the device is suitable for environmentally-conscious designs while guaranteeing consistent reliability and safety in various electronic applications.

Low on resistance of 1.20mΩ, enhancing efficiency

High power package (HSOP8) for effective thermal dissipation

Pb free plating meets RoHS standards for environmental safety

Halogen-free construction ensures compliance with safety regulations

100% Rg and UIS tested for reliability under harsh conditions

Designed for high-performance applications with extreme current capabilities

Avalanche-rated for single pulse capability up to 40A, ensuring robustness

Integrated safety features address potential failure scenarios

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