ROHM RD3N03BAT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N03BATTL1
- RS 제품 번호:
- 687-384
- 제조사 부품 번호:
- RD3N03BATTL1
- 제조업체:
- ROHM
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 2 units)*
₩2,628.24
재고있음
- 추가로 2025년 12월 29일 부터 2,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 2 - 18 | ₩1,314.12 | ₩2,628.24 |
| 20 - 48 | ₩1,156.20 | ₩2,312.40 |
| 50 - 198 | ₩1,041.52 | ₩2,081.16 |
| 200 - 998 | ₩842.24 | ₩1,682.60 |
| 1000 + | ₩819.68 | ₩1,639.36 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-384
- 제조사 부품 번호:
- RD3N03BATTL1
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 (TL) | |
| Series | RD3N03BAT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 (TL) | ||
Series RD3N03BAT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM P channel power MOSFET designed to deliver efficient operation in a variety of applications, including motor drives and switching circuits. With a maximum drain-source voltage of -80V and continuous drain current capabilities reaching -30A, this device is engineered for robust performance under demanding conditions. Its low on-resistance of 56mΩ ensures optimal efficiency, minimising energy losses during operation. Additionally, the TO-252 package allows for easy integration into electronic designs, providing versatility and reliability in compact form factors. The RD3N03BAT is also compliant with RoHS and halogen-free standards, making it a suitable choice for environmentally conscious designs.
Low on resistance for improved efficiency and reduced thermal management
High power capability within a compact TO-252 package for versatile application
RoHS and halogen-free compliance ensures environmental safety for modern electronics
Extensive testing, including Rg and UIS, guarantees reliable operation and performance
Wide operating temperature range of -55 to +150 °C supports various environmental conditions
Designed with reliable avalanche energy ratings for enhanced safety during transient conditions
관련된 링크들
- ROHM RD3L03BAT Type P-Channel MOSFET, 35 A, 60 V P, 3-Pin TO-252 RD3L03BATTL1
- ROHM RD3G03BAT Type P-Channel MOSFET, 35 A, 40 V P, 3-Pin TO-252 RD3G03BATTL1
- ROHM RD3L03BAT Type P-Channel MOSFET, 35 A, 60 V P, 3-Pin TO-252
- ROHM RD3G03BAT Type P-Channel MOSFET, 35 A, 40 V P, 3-Pin TO-252
- ROHM RD3L01BAT Type P-Channel MOSFET, 10 A, 60 V P, 3-Pin TO-252 RD3L01BATTL1
- ROHM RD3L07BAT Type P-Channel MOSFET, 70 A, 60 V P, 3-Pin TO-252 RD3L07BATTL1
- ROHM RD3G01BAT Type P-Channel MOSFET, 15 A, 40 V P, 3-Pin TO-252 RD3G01BATTL1
- ROHM RD3G07BAT Type P-Channel MOSFET, 70 A, 40 V P, 3-Pin TO-252 RD3G07BATTL1