Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3
- RS 제품 번호:
- 653-188
- 제조사 부품 번호:
- SQS201CENW-T1_GE3
- 제조업체:
- Vishay
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Subtotal (1 reel of 3000 units)*
₩2,694,000.00
일시적 품절
- 2027년 3월 15일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩898.00 | ₩2,693,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
대체품
이 제품은 현재 공급 불가입니다. 아래 제품들은 당사에서 추천드리는 대체품입니다.
1 개가 들어있는 1테이프
₩1,460.00
- RS 제품 번호:
- 653-188
- 제조사 부품 번호:
- SQS201CENW-T1_GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -16A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | PowerPAK | |
| Series | SQS201CENW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0800Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 175°C | |
| Height | 410μm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -16A | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type PowerPAK | ||
Series SQS201CENW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0800Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 175°C | ||
Height 410μm | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQS201CENW Series Single MOSFETs, 100V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3
This single MOSFETs device is a P‑channel enhancement MOSFET designed for power switching in demanding electronic systems. It operates over a broad ambient range and is suitable for PCB mounting in environments requiring high drain voltage capability and significant continuous current handling.
Features and Benefits:
• 100V drain withstand for high-voltage switching capability
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
Applications
• Suitable for high-voltage load switching in automotive electronics
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
What thermal extremes can the device tolerate during operation?
It is rated to operate from -55°C up to 175°C, allowing use in wide-temperature environments.
What package style and mounting method does it use for PCB assembly?
It is supplied in a PowerPAK 8‑pin package designed for direct PCB mounting to improve thermal performance.
How does the device support automotive applications?
It meets AEC‑Q101 requirements, making it suitable for vehicle electronic systems that need automotive‑grade components.
What gate drive considerations should be observed for reliable switching?
The gate can accept up to 20V relative to source and the typical gate charge is 26nC, which informs driver sizing and switching-loss calculations.
관련된 링크들
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