Vishay SIS4406DN N-Channel Single MOSFETs, 62.8 A, 40 V Enhancement, 8-Pin PowerPAK SIS4406DN-T1-GE3
- RS 제품 번호:
- 653-146
- 제조사 부품 번호:
- SIS4406DN-T1-GE3
- 제조업체:
- Vishay
Subtotal (1 reel of 3000 units)*
₩2,478,000.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩826.00 | ₩2,476,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-146
- 제조사 부품 번호:
- SIS4406DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 62.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIS4406DN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00475Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23.7nC | |
| Maximum Power Dissipation Pd | 33.7W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Height | 410μm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 62.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIS4406DN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00475Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23.7nC | ||
Maximum Power Dissipation Pd 33.7W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Height 410μm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 40 V drain-source voltage. Packaged in PowerPAK 1212-8, it utilizes TrenchFET Gen IV technology to deliver low gate charge (Qg), reduced output charge (Qoss), and optimized switching performance.
Pb Free
Halogen free
RoHS compliant
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