Vishay SQJ738EP Dual N-Channel Single MOSFETs, 123 A, 40 V Enhancement, 4-Pin PowerPAK
- RS 제품 번호:
- 653-067
- 제조사 부품 번호:
- SQJ738EP-T1_GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩2,650.80
재고있음
- 3,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩2,650.80 |
| 10 - 24 | ₩2,556.80 |
| 25 - 99 | ₩2,519.20 |
| 100 - 499 | ₩2,143.20 |
| 500 + | ₩2,011.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-067
- 제조사 부품 번호:
- SQJ738EP-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJ738EP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00317Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 93W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 5.09 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJ738EP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00317Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 93W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 5.09 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in demanding environments. It supports up to 40 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in PowerPAK SO-8L, it utilizes TrenchFET Gen IV technology for enhanced thermal and electrical performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
관련된 링크들
- Vishay SQJ738EP Dual N-Channel Single MOSFETs, 123 A, 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3
- Vishay SQJ443 Type P-Channel Single MOSFETs, 24 A, -40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ443 Type P-Channel Single MOSFETs, 24 A, -40 V Enhancement, 4-Pin PowerPAK SQJ443AEP-T1_GE3
- Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay SQJ131ELP Type P-Channel Single MOSFETs, -300 A, -30 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ141ELP Type P-Channel Single MOSFETs, -232 A, -40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ190 Type N-Channel Single MOSFETs, 19.6 A, 100 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ131ELP Type P-Channel Single MOSFETs, -300 A, -30 V Enhancement, 4-Pin PowerPAK SQJ131ELP-T1_GE3
