Vishay SQ3426CEEV Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6

RS 제품 번호:: 653-062
제조사 부품 번호:: SQ3426CEEV-T1_GE3
제조업체:: Vishay

Vishay SQ3426CEEV Type N-Channel Single MOSFETs, 7 A, 60 V Enhancement, 6-Pin TSOP-6

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 tape of 1 unit)*

₩620.00

추가로 2026년 8월 24일 부터 2,727 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

Tape(s)	Per Tape
1 - 24	₩620.00
25 - 99	₩560.00
100 - 499	₩500.00
500 - 999	₩420.00
1000 +	₩400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 653-062
제조사 부품 번호:: SQ3426CEEV-T1_GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TSOP-6
	Series	SQ3426CEEV
	Mount Type	PCB
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.042Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19.5nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	5W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Length	3.10mm
	Width	2.98mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 60V
	Package Type TSOP-6
	Series SQ3426CEEV
	Mount Type PCB
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.042Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19.5nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 5W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Height 1.1mm
	Standards/Approvals RoHS
	Length 3.10mm
	Width 2.98mm
	Automotive Standard AEC-Q101

Vishay SQ3426CEEV Series Single MOSFETs, 60V Drain Source Voltage, 7A Continuous Drain Current - SQ3426CEEV-T1_GE3

This single MOSFET device is an N‑channel enhancement transistor designed for power switching on PCB assemblies. It operates across a wide temperature range for demanding environments and conforms to RoHS and automotive stress requirements, making it suitable for industrial and vehicle electronics where controlled conduction and switching are required.

Features and Benefits:

• 60V drain rating enables medium‑voltage switching applications
• 7A continuous drain current supports substantial load currents
• 0.042 Ω low Rds(on) minimises conduction losses
• 19.5 nC gate charge permits predictable switching profiles
• 5W power dissipation allows moderate thermal loading
• 20V gate‑limit protects against excessive drive voltages

Applications

• Suitable for automotive power distribution modules
• Ideal for motor driver stages in control systems
• Used with DC-DC converter outputs for regulation
• Can be used for load switching in industrial electronics
• Suitable for power management on PCB‑mounted assemblies

What package type should designers plan for on the PCB?

The component arrives in a TSOP‑6 surface‑mount package requiring a six‑pin footprint and appropriate copper for thermal dissipation.

How does the device handle extreme temperatures in field use?

It is rated from -55 °C to 175 °C, supporting operation in both cold‑start and high‑temperature environments without derating the specified operating thresholds.

What electrical constraint must be observed at the gate?

The gate‑to‑source voltage must not exceed 20V to avoid overstress and potential device damage.

How does forward voltage affect switching performance?

The forward voltage of 1.2V influences conduction drop during on‑state transitions and should be factored into loss and thermal calculations.