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Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G

RS 제품 번호:: 644-261
제조사 부품 번호:: 2N7002-G
제조업체:: Microchip

Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G

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Subtotal (1 tape of 10 units)*

₩7,350.80

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추가로 2025년 12월 29일 부터 2,560 개 단위 배송

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수량	한팩당	Per Tape*
10 - 90	₩735.08	₩7,358.32
100 - 490	₩646.72	₩6,474.72
500 - 990	₩582.80	₩5,822.36
1000 +	₩460.60	₩4,604.12

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 644-261
제조사 부품 번호:: 2N7002-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	115mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	2N7002
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	0.36W
	Maximum Operating Temperature	150°C
	Standards/Approvals	Lead (Pb)-free/RoHS
	Height	1.12mm
	Width	1.3 mm
	Length	2.9mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 115mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series 2N7002
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 0.36W
	Maximum Operating Temperature 150°C
	Standards/Approvals Lead (Pb)-free/RoHS
	Height 1.12mm
	Width 1.3 mm
	Length 2.9mm
	Automotive Standard No

Datasheet - 2N7002-G

COO (Country of Origin):: TH

The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Free from Secondary Breakdown

Low Power Drive Requirement

Ease of Paralleling

Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G

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