onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002
- RS 재고 번호:
- 671-0312
- Distrelec 제품 번호:
- 304-08-906
- 제조 부품 번호:
- 2N7002
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩7,820.80
현재 액세스할 수 없는 재고 정보
단위당 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 740 | ₩391.04 | ₩7,839.60 |
| 760 - 1480 | ₩383.52 | ₩7,689.20 |
| 1500 + | ₩377.88 | ₩7,557.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 재고 번호:
- 671-0312
- Distrelec 제품 번호:
- 304-08-906
- 제조 부품 번호:
- 2N7002
- 제조업체:
- onsemi
사양
기술적 참조
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 223nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Length | 2.92mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 223nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Length 2.92mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
- COO (Country of Origin):
- CN
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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