Microchip VN2106 Type N-Channel Single MOSFETs, 600 mA, 60 V Enhancement, 3-Pin TO-92 VN2106N3-G
- RS 제품 번호:
- 598-580
- 제조사 부품 번호:
- VN2106N3-G
- 제조업체:
- Microchip
N
Subtotal (1 Bag of 2000 units)*
₩1,090,400.00
일시적 품절
- 2026년 2월 24일 부터 배송
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수량 | 한팩당 | Per Bag* |
|---|---|---|
| 2000 + | ₩545.20 | ₩1,090,024.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-580
- 제조사 부품 번호:
- VN2106N3-G
- 제조업체:
- Microchip
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | VN2106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.205in | |
| Standards/Approvals | RoHS | |
| Height | 0.82in | |
| Width | 0.165 in | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series VN2106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 0.205in | ||
Standards/Approvals RoHS | ||
Height 0.82in | ||
Width 0.165 in | ||
Automotive Standard No | ||
The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.
Ease of paralleling
Low power drive requirement
High input impedance and high gain
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