STMicroelectronics N-Channel STO60 N-Channel MOSFET, 79 A, 600 V, 8-Pin TO-LL STO60N030M9
- RS 제품 번호:
- 358-978
- 제조사 부품 번호:
- STO60N030M9
- 제조업체:
- STMicroelectronics
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩24,800.00
일시적 품절
- 2027년 3월 15일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩24,800.00 |
| 10 - 99 | ₩22,320.00 |
| 100 + | ₩20,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 358-978
- 제조사 부품 번호:
- STO60N030M9
- 제조업체:
- STMicroelectronics
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Operating Frequency | 1MHz | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 79A | |
| Output Power | 255W | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STO60 | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Width | 11.88mm | |
| Length | 10mm | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Operating Frequency 1MHz | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 79A | ||
Output Power 255W | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STO60 | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Width 11.88mm | ||
Length 10mm | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Very low FOM
Higher VDSS rating
Higher dv by dt capability
Easy to drive
100 percent avalanche tested
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