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Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1

RS 제품 번호:: 351-876
제조사 부품 번호:: IGLR65R140D2XUMA1
제조업체:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩28,312.80

재고있음

4,995 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 45	₩5,662.56	₩28,309.04
50 - 95	₩5,378.68	₩26,895.28
100 +	₩4,983.88	₩24,917.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-876
제조사 부품 번호:: IGLR65R140D2XUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Series	IGLR65
	Package Type	PG-TSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.17Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.8nC
	Maximum Gate Source Voltage Vgs	25 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	47W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Series IGLR65
	Package Type PG-TSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.17Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.8nC
	Maximum Gate Source Voltage Vgs 25 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 47W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R140D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer and industrial applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1

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