제조사부품번호

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

RS 제품 번호:: 351-874
제조사 부품 번호:: IGLR65R270D2XUMA1
제조업체:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩15,491.20

재고있음

5,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 45	₩3,098.24	₩15,487.44
50 - 95	₩2,944.08	₩14,716.64
100 - 495	₩2,726.00	₩13,633.76
500 - 995	₩2,509.80	₩12,552.76
1000 +	₩2,413.92	₩12,073.36

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-874
제조사 부품 번호:: IGLR65R270D2XUMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	650V
	Series	IGLR65
	Package Type	PG-TSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.33Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Power Dissipation Pd	28W
	Typical Gate Charge Qg @ Vgs	1nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 650V
	Series IGLR65
	Package Type PG-TSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.33Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Power Dissipation Pd 28W
	Typical Gate Charge Qg @ Vgs 1nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R270D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge and low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

관련된 링크들