Infineon IMW65 Type N-Channel MOSFET, 32.8 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R060M2HXKSA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩13,904.48

Add to Basket
수량 선택 또는 입력
재고있음
  • 235 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 9₩13,904.48
10 - 99₩12,511.40
100 - 499₩11,531.92
500 - 999₩10,699.08
1000 +₩9,595.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
351-867
제조사 부품 번호:
IMW65R060M2HXKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32.8A

Output Power

130W

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IMW65

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

21.5 mm

Length

16.3mm

Height

5.3mm

Standards/Approvals

JEDEC

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)

Best in class RDS(on)

High robustness and overall quality

Flexible driving voltage range

Support for unipolar driving (VGSoff=0)

Best immunity against turn-on effects

Improved package interconnect with .XT

관련된 링크들