제조사부품번호

Infineon CoolSiC Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R040M1TXKSA1

RS 제품 번호:: 349-376
제조사 부품 번호:: AIMZH120R040M1TXKSA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R040M1TXKSA1

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩32,035.20

재고있음

240 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩32,035.20
10 - 99	₩28,829.80
100 +	₩26,581.32

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-376
제조사 부품 번호:: AIMZH120R040M1TXKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	PG-TO-247-4-STD-NT6.7
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	268W
	Maximum Gate Source Voltage Vgs	23 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	43nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101, AEC-Q100

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 1200V
	Package Type PG-TO-247-4-STD-NT6.7
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 268W
	Maximum Gate Source Voltage Vgs 23 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 43nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101, AEC-Q100

Datasheet - AIMZH120R040M1TXKSA1

COO (Country of Origin):: CN

The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.

Very low switching losses

Best in class switching energy

Lowest device capacitances

Sense pin for optimized switching performance

Suitable for HV creepage requirements

Thinner leads for reduced risk of solder bridges

Infineon CoolSiC Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R040M1TXKSA1

관련된 링크들