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Infineon CoolSiC Type N-Channel MOSFET, 91 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1

RS 제품 번호:: 349-325
제조사 부품 번호:: IMBG65R020M2HXTMA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 91 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1

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Subtotal (1 unit)*

₩25,895.12

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추가로 2025년 12월 29일 부터 1,000 개 단위 배송

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수량	한팩당
1 - 9	₩25,895.12
10 - 99	₩23,313.88
100 +	₩21,503.44

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-325
제조사 부품 번호:: IMBG65R020M2HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	91A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO263-7
	Series	CoolSiC
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	326W
	Maximum Gate Source Voltage Vgs	23 V
	Typical Gate Charge Qg @ Vgs	57nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 91A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO263-7
	Series CoolSiC
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 326W
	Maximum Gate Source Voltage Vgs 23 V
	Typical Gate Charge Qg @ Vgs 57nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMBG65R020M2HXTMA1

COO (Country of Origin):: MY

The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever-growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon CoolSiC Type N-Channel MOSFET, 91 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1

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