Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

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  • 2026년 3월 30일 부터 배송
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RS 제품 번호:
284-928
제조사 부품 번호:
IQD009N06NM5CGATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

445A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

333W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

12nC

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high efficiency performance in various applications, providing stable operation at a maximum voltage of 60V. This N channel MOSFET features a low on resistance, which significantly reduces power losses, ensuring that your designs maintain optimal thermal management even under challenging conditions. With Advanced avalanche characteristics and extensive testing for reliability, this device caters to industrial applications demanding superior thermal resistance and robust performance. The Compact PG TTFN 9 packaging enhances ease of integration into existing designs, making it a go to choice for engineers looking to enhance their systems.

Very low on resistance improves efficiency

Enhanced thermal resistance for performance

Optimised for continuous and pulsed currents

Comprehensive avalanche ratings for durability

RoHS and halogen free compliant

Fully qualified per JEDEC standards

Significant savings on power dissipation

Flexible temperature range for diverse environments

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