Infineon OptiMOS Type N-Channel MOSFET, 120 A, 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
- RS 제품 번호:
- 284-711
- 제조사 부품 번호:
- IAUTN12S5N018TATMA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 284-711
- 제조사 부품 번호:
- IAUTN12S5N018TATMA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS | |
| Package Type | PG-HDSOP-16-1 | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 358W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS | ||
Package Type PG-HDSOP-16-1 | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 358W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Automotive Power MOSFET offers exceptional performance and reliability for automotive applications. With its N channel enhancement mode design, this power transistor is engineered to meet the stringent requirements of the automotive sector, ensuring superior efficiency and robust functionality. Boasting an extended qualification beyond AEC Q101, it undergoes enhanced electrical testing to guarantee durability even in harsh environments. This device supports a wide operating temperature range, making it suitable for diverse automotive conditions. Its low on state resistance and high continuous drain current capability make this MOSFET an Ideal choice for demanding power management tasks, ensuring that vehicle performance remains uncompromised.
Designed for automotive compliance
Robust for challenging environments
Enhanced testing for reliability
Excellent thermal performance
High efficiency with minimal loss
Avalanche rated for energy transients
MSL1 classification up to 260°C
Advanced gate charge for efficient switching
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