Infineon XHP Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1

모든 MOSFETs 열람하기
사용할 수 없음
RS는 더 이상 이 제품을 입고하지 않습니다.
RS 제품 번호:
277-191
제조사 부품 번호:
FF1200XTR17T2P5BPSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

1.2 kA

Maximum Drain Source Voltage

1700 V

Package Type

Tray

Series

XHP

Mounting Type

Screw Mount

Channel Mode

Depletion

Number of Elements per Chip

2

Transistor Material

SiC

COO (Country of Origin):
DE
The Infineon IGBT module is a XHP 2 1700 V, 1200 A dual IGBT module with .XT interconnection technology and TRENCHSTOP IGBT5 for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications.

Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Less cooling effort for same output power
Enables higher system overload conditions

관련된 링크들