Nexperia PSM Type N-Channel MOSFET, 60 A, 40 V Enhancement, 5-Pin LFPAK PSMN8R5-40MLDX
- RS 제품 번호:
- 219-384
- 제조사 부품 번호:
- PSMN8R5-40MLDX
- 제조업체:
- Nexperia
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩894.88
일시적 품절
- 2026년 7월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩894.88 |
| 10 - 99 | ₩812.16 |
| 100 - 499 | ₩750.12 |
| 500 - 999 | ₩686.20 |
| 1000 + | ₩624.16 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 219-384
- 제조사 부품 번호:
- PSMN8R5-40MLDX
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 59W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 59W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
관련된 링크들
- Nexperia PSM Type N-Channel MOSFET, 60 A, 40 V Enhancement, 5-Pin LFPAK PSMN8R5-40MLDX
- Nexperia PSM Type N-Channel MOSFET, 50 A, 40 V Enhancement, 5-Pin LFPAK PSMN6R7-40MLDX
- Nexperia PSM Type N-Channel MOSFET, 70 A, 25 V Enhancement, 5-Pin LFPAK PSMN3R5-25MLDX
- Nexperia PSM Type N-Channel MOSFET, 57 A, 30 V Enhancement, 5-Pin LFPAK PSMN7R5-30MLDX
- Nexperia PSM Type N-Channel MOSFET, 70 A, 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25MLDX
- Nexperia PSM Type N-Channel MOSFET, 70 A, 30 V Enhancement, 5-Pin LFPAK PSMN2R4-30MLDX
- Nexperia PSM Type N-Channel MOSFET, 60 A, 25 V Enhancement, 5-Pin LFPAK PSMN6R1-25MLDX
- Nexperia PSM Type N-Channel MOSFET, 66 A, 30 V Enhancement, 5-Pin LFPAK PSMN6R4-30MLDX