STMicroelectronics STripFET Type N-Channel MOSFET, 75 A, 200 V Enhancement, 3-Pin TO-263 STB75NF20
- RS 제품 번호:
- 151-918
- 제조사 부품 번호:
- STB75NF20
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
₩4,026,960.00
일시적 품절
- 2026년 4월 23일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 + | ₩4,026.96 | ₩4,027,524.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-918
- 제조사 부품 번호:
- STB75NF20
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.034Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Minimum Operating Temperature | 50°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Length | 15.85mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.034Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Minimum Operating Temperature 50°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Length 15.85mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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