STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- RS 제품 번호:
- 151-440
- 제조사 부품 번호:
- STD4NK60ZT4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tape of 20 units)*
₩20,865.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 20 - 180 | ₩1,043.25 | ₩20,865.00 |
| 200 - 480 | ₩990.60 | ₩19,812.00 |
| 500 - 980 | ₩918.45 | ₩18,369.00 |
| 1000 - 1980 | ₩846.30 | ₩16,906.50 |
| 2000 + | ₩815.10 | ₩16,282.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-440
- 제조사 부품 번호:
- STD4NK60ZT4
- 제조업체:
- STMicroelectronics
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.34mm | |
| Height | 2.39mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 10.34mm | ||
Height 2.39mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
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