STMicroelectronics SuperMESH Type N-Channel MOSFET, 9 A, 400 V Enhancement, 3-Pin TO-263 STB11NK40ZT4
- RS 제품 번호:
- 151-428
- 제조사 부품 번호:
- STB11NK40ZT4
- 제조업체:
- STMicroelectronics
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Subtotal (1 tape of 5 units)*
₩9,381.20
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- 1,975 개 단위 배송 준비 완료
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수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 45 | ₩1,876.24 | ₩9,381.20 |
| 50 - 95 | ₩1,778.48 | ₩8,892.40 |
| 100 - 495 | ₩1,654.40 | ₩8,272.00 |
| 500 + | ₩1,519.04 | ₩7,595.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-428
- 제조사 부품 번호:
- STB11NK40ZT4
- 제조업체:
- STMicroelectronics
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | SuperMESH | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series SuperMESH | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 15.85mm | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
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