STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N
- RS 제품 번호:
- 151-422
- 제조사 부품 번호:
- STL3NM60N
- 제조업체:
- STMicroelectronics
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Subtotal (1 reel of 3000 units)*
₩1,883,760.00
재고있음
- 3,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩627.92 | ₩1,880,940.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 151-422
- 제조사 부품 번호:
- STL3NM60N
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh II | |
| Package Type | PowerFLAT (3.3 x 3.3) HV | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 22W | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh II | ||
Package Type PowerFLAT (3.3 x 3.3) HV | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 22W | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
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