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STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP STP12NM50FP

RS 제품 번호:: 151-409
제조사 부품 번호:: STP12NM50FP
제조업체:: STMicroelectronics

STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP STP12NM50FP

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩174,746.00

재고있음

900 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 450	₩3,494.92	₩174,708.40
500 +	₩3,320.08	₩165,985.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 151-409
제조사 부품 번호:: STP12NM50FP
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220FP
	Series	MDmesh
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	350mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.5V
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Operating Temperature	150°C
	Width	10.4 mm
	Height	30.6mm
	Standards/Approvals	RoHS
	Length	15.85mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220FP
	Series MDmesh
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 350mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.5V
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Operating Temperature 150°C
	Width 10.4 mm
	Height 30.6mm
	Standards/Approvals RoHS
	Length 15.85mm
	Automotive Standard No

Datasheet - STP12NM50FP

COO (Country of Origin):: CN

The STMicroelectronics N-channel Power MOSFET, This device developed using MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP STP12NM50FP

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