Infineon, 32 bit ARM Cortex M7, XMC7200 Microcontroller, 350 MHz, 1024kB SRAM, 176-Pin TQFP

RS 제품 번호:: 260-1110
제조사 부품 번호:: XMC7200D-F176K8384AA
제조업체:: Infineon

Infineon, 32 bit ARM Cortex M7, XMC7200 Microcontroller, 350 MHz, 1024kB SRAM, 176-Pin TQFP

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tray of 400 units)*

₩11,295,040.00

현재 액세스할 수 없는 재고 정보

수량	한팩당	Per Tray*
400 - 400	₩28,237.60	₩11,295,416.00
800 - 800	₩27,673.60	₩11,069,515.20
1200 +	₩27,120.88	₩10,848,126.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 260-1110
제조사 부품 번호:: XMC7200D-F176K8384AA
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Microcontroller
	Series	XMC7200
	Package Type	TQFP
	Pin Count	176
	Device Core	ARM Cortex M7
	Data Bus Width	32bit
	Program Memory Size	1024kB
	Maximum Clock Frequency	350MHz
	RAM Size	32kB
	Maximum Supply Voltage	5.5V
	Minimum Operating Temperature	-40°C
	Number of Programmable I/Os	220
	Maximum Operating Temperature	125°C
	Length	24mm
	Standards/Approvals	No
	Height	1.5mm
	Minimum Supply Voltage	2.7V
	Instruction Set Architecture	RISC
	Program Memory Type	SRAM
	ADCs	96 x 12 Bit
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Microcontroller
	Series XMC7200
	Package Type TQFP
	Pin Count 176
	Device Core ARM Cortex M7
	Data Bus Width 32bit
	Program Memory Size 1024kB
	Maximum Clock Frequency 350MHz
	RAM Size 32kB
	Maximum Supply Voltage 5.5V
	Minimum Operating Temperature -40°C
	Number of Programmable I/Os 220
	Maximum Operating Temperature 125°C
	Length 24mm
	Standards/Approvals No
	Height 1.5mm
	Minimum Supply Voltage 2.7V
	Instruction Set Architecture RISC
	Program Memory Type SRAM
	ADCs 96 x 12 Bit
	Automotive Standard No

Datasheet - XMC7200D-F176K8384AA

Infineon Microcontroller, 1024 KB Program Memory size, 350 MHz Maximum Frequency - XMC7200D-F176K8384AA

This high-performance MOSFET from Infineon is designed for use in various power management applications. Featuring a TO-220 package, it provides robust performance with a maximum continuous drain current of 50A and a maximum drain-source voltage of 30V. With a low on-resistance and high power dissipation capability, this MOSFET ensures optimal efficiency in demanding electrical systems.

Features & Benefits

• Low drain-source resistance (7.8 mΩ) reduces power loss and enhances operational efficiency

• Maximum power dissipation of 68W ensures reliable operation under high-load conditions

• Wide gate threshold voltage range (1V to 2.2V) offers flexible control for different voltage levels

• High thermal stability with a maximum operating temperature of +175°C

• Enhancement-mode design for efficient switching and precise control of current flow

• Robust gate-source voltage tolerance (-20V to +20V) ensures protection against overvoltage

• Single-transistor configuration ideal for space-constrained designs

Applications

• Suitable for DC/DC converters and power supply

• Used in synchronous rectification for improved converter efficiency

• Ideal for motor control in industrial automation systems

• Employed in battery management systems for electric vehicles

• Applicable in renewable energy systems and consumer electronics

What is the advantage of the low drain-source resistance (RDS(on))?

The low RDS(on) minimises conduction losses and heat generation, improving the overall efficiency of power management systems and ensuring more energy is converted into useful work rather than being lost as heat.

How does the MOSFET handle high power dissipation?

With a maximum power dissipation rating of 68W, the device is designed to manage significant heat during operation, maintaining stability even in demanding conditions.

What is the significance of the gate threshold voltage range?

The wide gate threshold voltage range (1V to 2.2V) provides flexibility in circuit design, allowing the MOSFET to operate efficiently with various control voltages, making it suitable for different applications requiring precise voltage management.