MikroElektronika MIKROE-5885 Add-On Board, EEPROM EEPROM Memory Board for M24M01E for mikroBUS Socket
- RS 제품 번호:
- 102-839
- 제조사 부품 번호:
- MIKROE-5885
- 제조업체:
- MikroElektronika
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩17,766.00
재고있음
- 2 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩17,766.00 |
| 10 + | ₩17,239.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 102-839
- 제조사 부품 번호:
- MIKROE-5885
- 제조업체:
- MikroElektronika
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | MikroElektronika | |
| Product Type | Memory Development Kit | |
| Memory Size | 1MB | |
| Kit Classification | EEPROM Memory Board | |
| For Use With | mikroBUS Socket | |
| Featured Device | M24M01E | |
| Kit Name | Add-On Board | |
| Memory Type | EEPROM | |
| Standards/Approvals | ISO 9001, ISO 14001, ISO 27001, RoHS, OHSAS 18001 | |
| 모두 선택 | ||
|---|---|---|
브랜드 MikroElektronika | ||
Product Type Memory Development Kit | ||
Memory Size 1MB | ||
Kit Classification EEPROM Memory Board | ||
For Use With mikroBUS Socket | ||
Featured Device M24M01E | ||
Kit Name Add-On Board | ||
Memory Type EEPROM | ||
Standards/Approvals ISO 9001, ISO 14001, ISO 27001, RoHS, OHSAS 18001 | ||
- COO (Country of Origin):
- RS
The MikroElektronika EEPROM 13 Click is a compact add-on board that contains a highly reliable, non-volatile memory solution. This board features the M24M01E, an electrically erasable programmable memory with enhanced hardware write protection for entire memory from STMicroelectronics. Its memory size of 1Mbit is organized as 128K words of 8bits each, with a page size of 256 bytes and an additional 256 bytes of identification page. The identification page can be used to store sensitive application parameters, which can be permanently locked in read-only mode. This Click board makes the perfect solution for the development of and industrial applications where dependable, non-volatile memory storage is essential.
Supports standard
Fast, and fast mode plus I2C interface
1-Mbit of EEPROM in 256 bytes of page sizes
Random and sequential read modes
Write protection of the whole memory array
Enhanced ESD latch-up protection
Long data retention and data write cycles
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