Toshiba 2SK208-R(TE85L,F), Single N-Channel JFET-Channel JFET, 10 V 0.3 to 0.75 mA, 3-Pin SOT-346
- RS 제품 번호:
- 760-3123
- 제조사 부품 번호:
- 2SK208-R(TE85L,F)
- 제조업체:
- Toshiba
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
₩4,720.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩472.00 | ₩4,720.00 |
| 50 - 90 | ₩458.00 | ₩4,580.00 |
| 100 - 240 | ₩442.00 | ₩4,420.00 |
| 250 - 490 | ₩434.00 | ₩4,340.00 |
| 500 + | ₩424.00 | ₩4,240.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 760-3123
- 제조사 부품 번호:
- 2SK208-R(TE85L,F)
- 제조업체:
- Toshiba
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Toshiba | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Channel Type | N | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-346 | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Gate Source Voltage Vgs | -30V | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Drain Source Resistance Rds | 100kΩ | |
| Drain Source Current Ids | 0.3 to 0.75 mA | |
| Maximum Operating Temperature | 125°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 1.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Toshiba | ||
Sub Type JFET | ||
Product Type JFET | ||
Channel Type N | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-346 | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Gate Source Voltage Vgs -30V | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Drain Source Resistance Rds 100kΩ | ||
Drain Source Current Ids 0.3 to 0.75 mA | ||
Maximum Operating Temperature 125°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 1.5mm | ||
Automotive Standard No | ||
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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