onsemi CPH3910-TL-E, Junction Type Type N-Channel JFET-Channel N-Channel JFET, 25 V 50 mA, 3-Pin CPH

N

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능
View bulk pricing options

Subtotal (1 tape of 20 units)*

₩13,845.00

Add to Basket
수량 선택 또는 입력
일시적 품절
  • 2026년 7월 10일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량
한팩당
Per Tape*
20 - 180₩692.25₩13,848.90
200 - 980₩429.00₩8,580.00
1000 - 1980₩331.50₩6,641.70
2000 +₩298.35₩5,967.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
765-321
제조사 부품 번호:
CPH3910-TL-E
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

N-Channel JFET

Channel Type

Type N

Sub Type

JFET

Maximum Drain Source Voltage Vds

25V

Configuration

Junction Type

Mount Type

Surface

Package Type

CPH

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

400mW

Pin Count

3

Drain Source Current Ids

50 mA

Maximum Operating Temperature

150°C

Height

0.9mm

Width

2.9mm

Length

2.8mm

Series

CPH3

Automotive Standard

No

COO (Country of Origin):
CN
The onsemi N-Channel JFET designed for applications requiring precision RF amplification and low noise operation. With a maximum drain-to-source voltage of 25V and a typical forward transfer admittance of 40 mS, this component excels in demanding environments. Ideal for AM tuner RF amplification and low noise applications, its ensures reliable performance across a range of temperatures and power levels. The device's low noise figure and high input capacitance make it suitable for critical communication signalling tasks, ensuring clarity and fidelity in signal transmission.

Features a maximum drain current of 50 mA for robust signal processing

Incorporates a gate current capability of 10 mA for versatile circuit integration

Offers a high input capacitance of 6.0 pF, enhancing signal stability

Provides a critical cutoff voltage range, ensuring efficient operation in diverse conditions

Designed as a Pb-free device, meeting modern environmental standards

Exhibits a low gate-to-drain breakdown voltage of −25V, promoting enhanced safety in usage

Delivers a significant noise figure of 2.1 dB, reducing unwanted noise interference

Optimised for AM tuner RF amplification, fostering superior audio quality in communications

관련된 링크들