Infineon, Type N-Channel IGBT Module, 400 A 1.2 kV, 5-Pin 62 mm Module, Surface

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 IGBTs 열람하기
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
838-6908
제조사 부품 번호:
FZ400R12KE3B1HOSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Maximum Continuous Collector Current Ic

400A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1.2kV

Maximum Power Dissipation Pd

2.25kW

Number of Transistors

1

Package Type

62 mm Module

Mount Type

Surface

Channel Type

Type N

Pin Count

5

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

125°C

Length

106.4mm

Series

FZ400R12KE3_B11

Standards/Approvals

No

Height

36.5mm

Automotive Standard

No

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

관련된 링크들