제조사부품번호

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

RS 제품 번호:: 796-5055
제조사 부품 번호:: GT20J341
제조업체:: Toshiba

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩3,233.60

마지막 RS 재고

최종적인 16 개 unit(s)이 배송 준비 됨

수량	한팩당
1 - 12	₩3,233.60
13 - 24	₩3,158.40
25 +	₩3,102.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 796-5055
제조사 부품 번호:: GT20J341
제조업체:: Toshiba

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Toshiba
	Maximum Continuous Collector Current	20 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	45 W
	Package Type	TO-220SIS
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	100kHz
	Transistor Configuration	Single
	Dimensions	10 x 4.5 x 15mm
	Maximum Operating Temperature	+150 °C

	모두 선택
	브랜드 Toshiba
	Maximum Continuous Collector Current 20 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 45 W
	Package Type TO-220SIS
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 100kHz
	Transistor Configuration Single
	Dimensions 10 x 4.5 x 15mm
	Maximum Operating Temperature +150 °C

IGBT Discretes, Toshiba

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

IGBT Discretes, Toshiba

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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