Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole

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RS 제품 번호:
184-521
제조사 부품 번호:
GT60J323(Q)
제조업체:
Toshiba
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브랜드

Toshiba

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Package Type

TO-3PLH

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

20.5 x 5.2 x 26mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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