Semikron Danfoss SKM150GAR12T4, Type N-Channel Fast IGBT4 Module, 232 A 1200 V, 5-Pin SEMITRANS2, Surface
- RS 제품 번호:
- 687-4955
- 제조사 부품 번호:
- SKM150GAR12T4
- 제조업체:
- Semikron Danfoss
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Subtotal (1 unit)*
₩229,604.40
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩229,604.40 |
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| 20 + | ₩220,655.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 687-4955
- 제조사 부품 번호:
- SKM150GAR12T4
- 제조업체:
- Semikron Danfoss
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Maximum Continuous Collector Current Ic | 232A | |
| Product Type | Fast IGBT4 Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Package Type | SEMITRANS2 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 5 | |
| Switching Speed | 180ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 34 mm | |
| Standards/Approvals | IEC 60747-1 | |
| Series | GAR | |
| Height | 30.1mm | |
| Length | 94mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Maximum Continuous Collector Current Ic 232A | ||
Product Type Fast IGBT4 Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Package Type SEMITRANS2 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 5 | ||
Switching Speed 180ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 34 mm | ||
Standards/Approvals IEC 60747-1 | ||
Series GAR | ||
Height 30.1mm | ||
Length 94mm | ||
Automotive Standard No | ||
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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