Infineon IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- RS 제품 번호:
- 273-7441
- 제조사 부품 번호:
- IHW20N65R5XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩8,140.40
재고있음
- 140 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩4,070.20 | ₩8,140.40 |
| 10 - 98 | ₩3,694.20 | ₩7,388.40 |
| 100 - 248 | ₩3,393.40 | ₩6,786.80 |
| 250 + | ₩3,130.20 | ₩6,260.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7441
- 제조사 부품 번호:
- IHW20N65R5XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Standards/Approvals | JESD-022, RoHS | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Standards/Approvals JESD-022, RoHS | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
관련된 링크들
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