제조사부품번호

Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin PG-TO-247

RS 제품 번호:: 260-5101
제조사 부품 번호:: IKW40N65ES5XKSA1
제조업체:: Infineon

Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin PG-TO-247

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 2 units)*

₩19,360.00

추가로 2026년 11월 02일 부터 162 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩9,680.00	₩19,360.00
10 - 98	₩8,700.00	₩17,400.00
100 - 198	₩7,100.00	₩14,200.00
200 - 498	₩7,010.00	₩14,020.00
500 +	₩6,500.00	₩13,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 260-5101
제조사 부품 번호:: IKW40N65ES5XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	79A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	230W
	Package Type	PG-TO-247
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 ±30 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.35V
	Maximum Operating Temperature	175°C
	Height	5.21mm
	Length	42mm
	Width	16.13mm
	Standards/Approvals	JEDEC
	Series	IKW
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 79A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 230W
	Package Type PG-TO-247
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 ±30 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.35V
	Maximum Operating Temperature 175°C
	Height 5.21mm
	Length 42mm
	Width 16.13mm
	Standards/Approvals JEDEC
	Series IKW
	Automotive Standard No

Datasheet - IKW40N65ES5XKSA1

Infineon IKW Series IGBT, 79A Maximum Continuous Collector Current, 230W Maximum Power Dissipation - IKW40N65ES5XKSA1

This IGBT is a three‑pin power transistor designed for high‑power switching in industrial contexts. It operates across a wide temperature range and conforms to established semiconductor testing standards, providing a straightforward solution for applications that require substantial current handling and appreciable thermal dissipation capability.

Features and Benefits:

• 79A collector current enabling sustained high‑load operation
• 230W power dissipation supporting significant thermal throughput
• 650V gate‑emitter voltage tolerance allowing high‑voltage switching
• 1.35V VCE(sat) reducing conduction losses during Active modes
• -40 to 175°C rated temperature range permitting use in harsh environments

Applications

• Suitable for motor drive assemblies requiring high current
• Used with inverter stages in industrial power converters
• Ideal for switching elements in renewable‑energy inverters
• Can be used for high‑power UPS and industrial power-supply systems

What package does it use for mounting compatibility?

It is supplied in a PG‑TO‑247 package that suits standard TO‑247 heatsinking and mounting arrangements.

How many electrical connections are present for circuit integration?

The device provides three pins for gate, collector and emitter connections in a typical transistor configuration.

Which approval indicates standardised test recognition?

It holds JEDEC approval confirming adherence to common semiconductor test criteria.

What is the maximum collector‑emitter saturation voltage under load?

The maximum VCE(sat) specified is 1.35V, which indicates the expected conduction drop during on‑state operation.