제조사부품번호

onsemi NXH100B120H3Q0SG IGBT Module 1200 V Case 180AJ, Surface

RS 제품 번호:: 245-6964
제조사 부품 번호:: NXH100B120H3Q0SG
제조업체:: onsemi

onsemi NXH100B120H3Q0SG IGBT Module 1200 V Case 180AJ, Surface

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 액세스할 수 없는 재고 정보

RS 제품 번호:: 245-6964
제조사 부품 번호:: NXH100B120H3Q0SG
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	186W
	Number of Transistors	2
	Package Type	Case 180AJ
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Series	NXH100B120H3Q0SG
	Height	13.9mm
	Standards/Approvals	RoHS
	Length	55.2mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 186W
	Number of Transistors 2
	Package Type Case 180AJ
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Series NXH100B120H3Q0SG
	Height 13.9mm
	Standards/Approvals RoHS
	Length 55.2mm
	Automotive Standard No

Datasheet - NXH100B120H3Q0SG

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and Anti parallel Diodes

Low Inductive Layout

Solderable Pins or Press Fit Pins

Thermistor options with pre applied thermal interface material and without pre applied TIM

onsemi NXH100B120H3Q0SG IGBT Module 1200 V Case 180AJ, Surface

관련된 링크들