Infineon IKN04N60RC2ATMA1 IGBT Single Transistor IC, 4 A 600 V PG-SOT223
- RS 제품 번호:
- 240-8531
- 제조사 부품 번호:
- IKN04N60RC2ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩11,080.00
일시적 품절
- 2,930 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩2,216.00 | ₩11,080.00 |
| 10 - 95 | ₩2,168.00 | ₩10,840.00 |
| 100 - 245 | ₩2,120.00 | ₩10,600.00 |
| 250 - 495 | ₩2,068.00 | ₩10,340.00 |
| 500 + | ₩2,012.00 | ₩10,060.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 240-8531
- 제조사 부품 번호:
- IKN04N60RC2ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 4A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 6.8W | |
| Package Type | PG-SOT223 | |
| Switching Speed | 20kHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 4A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 6.8W | ||
Package Type PG-SOT223 | ||
Switching Speed 20kHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon RC Drives 2 600 V, 1 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF. It provides low switching loses on competitive price and is asy to design in products – drop in SMD replacement in DPAK and SOT-223 with high system reliability.
Improved controllability
Operating range of 1 to 20 kHz
Humidity robust design
Maximum junction temperature 150°C
Short circuit capability of 3 μs
Very tight parameter distribution
Pb free lead plating, RoHs compliant
Complete product spectrum and SPICE models
관련된 링크들
- Infineon IGBT Single Transistor IC, 4 A 600 V PG-SOT223
- Infineon IKN01N60RC2ATMA1, Type N-Channel IGBT with integrated Diode, 1 A 600 V, 3-Pin PG-SOT223
- Infineon IKN06N60RC2ATMA1 Reverse Conducting Drive, 6 A 600 V PG-SOT223
- Infineon IKN03N60RC2ATMA1 Reverse Conducting Drive, 3 A 600 V PG-SOT223
- Infineon, Type N-Channel IGBT with integrated Diode, 1 A 600 V, 3-Pin PG-SOT223
- Infineon Reverse Conducting Drive, 6 A 600 V PG-SOT223
- Infineon Reverse Conducting Drive, 3 A 600 V PG-SOT223
- Infineon IKD04N60RC2ATMA1 IGBT, 8 A 600 V TO-252